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IoT: Bird’s Eye View, Megatrends and Perspectives Read chapter Read first chapter

2017 | OriginalPaper | Chapter

7. On-Chip Non-volatile STT-MRAM for Zero-Standby Power

Authors : Xuanyao Fong, Kaushik Roy

Published in: Enabling the Internet of Things

Publisher: Springer International Publishing

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Abstract

In this Chapter, we present spin-transfer torque magnetic random access memory (STT-MRAM) suitable for IoT applications. Its ability to operate at low supply voltages, non-volatility, good endurance, and small bit-cell footprint are especially attractive for IoT applications in which low energy consumption is crucial. We will present the fundamentals of STT-MRAM. The design of the STT-MRAM storage device, memory bit-cell and memory array architecture are also discussed to highlight the benefits STT-MRAM brings to IoT applications, as well as the design issues that need to be considered. We then present a device/circuit/architecture co-design approach for STT-MRAM. Finally, we will discuss the trends in STT-MRAM and give some perspectives on the future of STT-MRAM design.

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Metadata
Title
On-Chip Non-volatile STT-MRAM for Zero-Standby Power
Authors
Xuanyao Fong
Kaushik Roy
Copyright Year
2017
Book
Enabling the Internet of Things

Print ISBN: 978-3-319-51480-2

Electronic ISBN: 978-3-319-51482-6

Copyright Year: 2017

DOI
https://doi.org/10.1007/978-3-319-51482-6_7