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Journal of Materials Science: Materials in Electronics

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01-11-2009

Optical and structural characteristics of Sb-doped SnO₂ thin films grown on Si (111) substrates by Sol–Gel technique

Authors: Hongmei Deng, Jing Kong, Pingxiong Yang

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2009

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Abstract

The optical and structural characteristics of Sb-doped SnO₂ films grown on Si (111) substrates by modified sol–gel technique have been investigated. The films are both polycrystalline and retain the SnO₂ peaks of the rutile phase corresponding to (110), (101), (211) and (310) without any other phases appearing. X-ray photoelectron spectroscopy shows the peaks corresponding to the Sn 3d _5/2, the O 1s, and the Sb 3d _5/2 states. Refractive indices n, and extinction coefficients k, as functions of the incident photon energy were obtained for the films by spectroscopic ellipsometry measurement, and the refractive indices were from 1.95 to 1.50 at 2.6 eV with increasing Sb content. The optical constants, n and k, of the films can be controlled by variable Sb content. These results are important for the applications in integrated optical devices.

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Title: Optical and structural characteristics of Sb-doped SnO2 thin films grown on Si (111) substrates by Sol–Gel technique
Authors: Hongmei Deng
Jing Kong
Pingxiong Yang
Publication date: 01-11-2009
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 11/2009
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-008-9829-4

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