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Erschienen in:
01.11.2009
Optical and structural characteristics of Sb-doped SnO2 thin films grown on Si (111) substrates by Sol–Gel technique
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2009
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Abstract
The optical and structural characteristics of Sb-doped SnO2 films grown on Si (111) substrates by modified sol–gel technique have been investigated. The films are both polycrystalline and retain the SnO2 peaks of the rutile phase corresponding to (110), (101), (211) and (310) without any other phases appearing. X-ray photoelectron spectroscopy shows the peaks corresponding to the Sn 3d
5/2, the O 1s, and the Sb 3d
5/2 states. Refractive indices n, and extinction coefficients k, as functions of the incident photon energy were obtained for the films by spectroscopic ellipsometry measurement, and the refractive indices were from 1.95 to 1.50 at 2.6 eV with increasing Sb content. The optical constants, n and k, of the films can be controlled by variable Sb content. These results are important for the applications in integrated optical devices.