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Published in:
30-01-2016
Oxidation kinetics of \(\hbox {ZrO}_2\) films on Si by differential scanning calorimetry
Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2016
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Abstract
Differential scanning calorimetry (DSC) technique is employed to study the growth kinetics of zirconium dioxide where oxidation of a 23 nm-thick Zr film, deposited on Si (100) substrate using dc sputtering system, is studied in \(\hbox {O}_2\) ambient. The activation energy, derived from the DSC data is 1.36 eV and the diffusion coefficient of oxygen in Zr is estimated as \(1.625 \times 10^{-6} \exp (-\frac{1.36~\hbox {eV}}{k_BT}) {\mathrm{m}}^2/{\mathrm{s}}\). The results indicate a parabolic temperature dependence of the \(\hbox {ZrO}_2\) growth with time. From isothermal measurements, it is further observed that the diffusion coefficient of oxygen in Zr, in logarithmic scale, varies linearly with temperature upto 870 \(^{\circ }\hbox {C}\) beyond which the linear dependence is continued with a different slope. Such a change in slope is due to the change in diffusion coefficient of \(\hbox {O}_2\) in ZrSi, \(\hbox {ZrSi}_2\) and Si leading to formation of interfacial \(\hbox {SiO}_2\) layer and Zr–Silicate at higher temperature. Synchrotron-based grazing incidence X-ray diffraction study on the \(\hbox {ZrO}_2\) samples, oxidized in furnace at different temperatures, also corroborates the above observation.