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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 8/2021

26-03-2021

Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure

Authors: Aoqiu Wang, Jiakui Zhang, Gangqiang Zha, Lingyan Xu, Wanqi Jie

Published in: Journal of Materials Science: Materials in Electronics | Issue 8/2021

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Abstract

TE/CdZnTe/Pt/Ti/SiO2/Si structures (top electrode TE = Au, Pt, Al, Ti and Cu) were fabricated by magnetron sputtering and thermal evaporation. Bipolar resistive switching behavior was observed in TE/CdZnTe/Pt/Ti/SiO2/Si structure when TE is Al, Ti or Cu, but Pt or Au as TE in TE/CdZnTe/Pt device showed no resistive switching. The interfacial layer-dominated model was proposed to explain the presence of resistive switching behavior in TE/CdZnTe/Pt device due to oxidizable electrodes. The role of the CdZnTe film is a series resistor after the forming process. Space charge-limited current model was used to analyze the conduction mechanism and ~ 1019 cm−3 trap density in the interfacial layer was calculated by fitting the current–voltage curve. The device properties including voltage parameter distribution, retention property and endurance property were tested, respectively. The Al/CdZnTe/Pt/Ti/SiO2/Si structure has a good potential as resistive switching random access memory with over 103 ON/OFF ratio and at least 103 s retention time.
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Metadata
Title
Oxidizable electrode induced bipolar resistive switching behavior in TE/CdZnTe/Pt structure
Authors
Aoqiu Wang
Jiakui Zhang
Gangqiang Zha
Lingyan Xu
Wanqi Jie
Publication date
26-03-2021
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 8/2021
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-021-05739-3

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