Oxygen Effect on Secondary Ion Yield in Oxygen-Doped Silicon

SIMS quantification is complicated by the fact that ion yields of a given element are not matrix-independent (the SIMS matrix effect). When oxygen-ion bombardment is employed, the surface oxygen concentration is considered to be an important factor in determining ion yield. Some workers have attempted to explain the matrix effect in terms of the surface oxygen concentration [1,2]. However, no simple theory has been verified that can predict ion yield variations for a given element sputtered from different matrices [3,4]. The purpose of our study was to obtain fundamental information about the oxygen effect using oxygen-doped silicon for SIMS quantification.