Partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused silicon solar cells

In the present work, partial morphology-damaged laser boron doping technique and novel passivated emitter and rear locally diffused (PERL) silicon solar cells were studied. Effective boron doping as well as the partial morphology damage was achieved at the same time by laser doping (LD). Meanwhile, the electrical property of laser-doped area deteriorated dramatically, with the sharp decrease of effective minority carrier lifetime (τ_eff) and implied open voltage (iV_OC). The degradation was mainly ascribed to the destroyed SiN_xO_y structure, which was characterized by secondary ion mass spectroscopy (SIMS). However, the total amount of boron atoms was not large enough to modify the p + concentration after Al alloying. By applying multiple laser scanning, surface p + concentration of 5e20 cm^− 3 was realized, contributing to an enhanced local back surface field (BSF). Eventually, the efficiency of laser boron-doped PERL solar cell reached 22.00%, which was 0.1% higher than that of the conventional PERC solar cells. The present work will be helpful to deepen the understanding of boron laser doping as well as PERL structure solar cell.