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2021 | OriginalPaper | Chapter

Performance Analysis of Ga_0.47In_0.53Sb-FinFET and Si-FinFET for RF and Low-Power Design Applications

Authors : Ankit Dixit, Dip Prakash Samajdar, Dheeraj Sharma

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

In this paper, a tri-gate N-channel Ga_0.47In_0.53Sb-based FinFET is compared with conventional Si-based device for high-frequency applications. TCAD simulation tool is used to investigate the DC behavior of device for different bias voltages. Capacitative analysis is utilized to investigate the RF parameters such as intrinsic delay, power and energy dissipation, transconductance generation factor, and high cut-off frequency of the device. Si-FinFET exhibits better DC performance whereas Ga_0.47In_0.53Sb-FinFET excels in terms of RF performance factors such as lower gate delay, lesser power consumption, and energy dissipation with higher cut-off frequency. All these findings conclude that InGaSb-based FinFETs can serve as suitable candidates for novel nanoelectronic devices operating in the high-frequency regime.

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Title: Performance Analysis of Ga0.47In0.53Sb-FinFET and Si-FinFET for RF and Low-Power Design Applications
Authors: Ankit Dixit
Dip Prakash Samajdar
Dheeraj Sharma
Publisher: Springer Singapore
Book: Computers and Devices for Communication
Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021
DOI: https://doi.org/10.1007/978-981-15-8366-7_78

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