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Published in:
2021 | OriginalPaper | Chapter
Technology CAD for Dual-Bit Non-volatile Flash Memory to Enhance Storage Capability
Authors : B. Sachitra Kumar Patra, Aniket Padhy, E. Roshni, V. Ramya, Shrabani Mahata, Sandipan Mallik, Satya Sopan Mahato
Published in: Computers and Devices for Communication
Publisher: Springer Singapore
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Abstract
A flash memory cell may store a single bit (single-level cell-SLC) or multi-bit binary data (multi-level cell-MLC). MLC devices are of less cost and allowed for higher storage density. Here, a dual-bit storage flash memory cell is presented which is capable to store two bits of information. It consists of two floating gates. One is present at the drain side, and the other one is present at the source side. The floating gates are electrically isolated from all the other electrodes by an inter-gate dielectric. The control gate and floating gate are separated by the control oxide layer, and the floating gate and substrate are separated by the tunnel oxide layer. Programming of the memory can be achieved by hot-carrier injection or F-N tunneling while erasing of the memory can be achieved by F-N tunneling.