Performance analysis of irradiation induced defected mixed CNT bundle based coupled VLSI interconnects

In this paper, a comparative study between irradiation-induced defected mixed carbon nanotube bundle (MCB) and copper based interconnects concerning functional crosstalk as well as dynamic crosstalk, at the far end of both aggressor and victim lines, are presented at 14 nm technology node for a temperature range (300 K-500 K). Four different structures of MCB namely ST-1, ST-2, ST-3 and ST-4 are taken for the analysis. If the temperature increases from 300 to 500 K, each structure of MCB with irradiation-induced defect is showing larger propagation delay as compared to defect-free MCB structures. Due to irradiation-induced defect, there is a considerable increase in crosstalk induced noise peak and duration in every MCB structure. The results further reveal that crosstalk-induced noise voltage peaks of the victim output are found to be larger in copper as compared to MCB. Also, the ST-4, considering with defect(WD) and without defect(WOD), has smaller crosstalk induced delay and time duration with higher noise voltage peaks of the victim output pulse among other structures of MCB. Moreover, the crosstalk-induced delay of coupled interconnects of the best structure of MCB (i.e. ST-4), considering irradiation-induced defect, is evaluated using the temperature-dependent (TD) and temperature-independent (TID) circuit models at different interconnect lengths (200 µm–1000 µm).