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IEEE 754 Floating Point Pipelined Multiplier with Karatsuba for Mitigations of Area and Power Read chapter Read first chapter

2021 | OriginalPaper | Chapter

Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers

Authors : Apu Mistry, Dipankar Biswas

Published in: Computers and Devices for Communication

Publisher: Springer Singapore

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Abstract

The effect of introducing an InAlN or AlGaN IL (interlayer) in between the barrier and QW for the green emission has been studied. The tensile strain of AlGaN compensates the compressive strain of InGaN/GaN interface. The IL increases the barrier potential and reduces the carrier leakage from the QW. These increase the device efficiency. By changing the doping in the barrier, the optical output can be increased for green QW LEDs with and without interlayer. The best results are obtained for the AlGaN IL which increases the transition probability up to 2 times, as compared to the QW LEDs, without IL.

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Metadata
Title
Performance Enhancement of InGaN/GaN Green QW LEDs with Different Interlayers and Doping in the Barriers
Authors
Apu Mistry
Dipankar Biswas
Copyright Year
2021
Publisher
Springer Singapore
Book
Computers and Devices for Communication

Print ISBN: 978-981-15-8365-0

Electronic ISBN: 978-981-15-8366-7

Copyright Year: 2021

DOI
https://doi.org/10.1007/978-981-15-8366-7_71