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Semiconductors
Published in: Semiconductors 2/2006

01-02-2006 | Low-Dimensional Systems

Persistent IR photoconductivity in InAs/GaAs structures with QD layers

Authors: V. A. Kul’bachinskiĭ, V. A. Rogozin, V. G. Kytin, R. A. Lunin, B. N. Zvonkov, Z. M. Dashevsky, V. A. Casian

Published in: Semiconductors | Issue 2/2006

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previous article Modification of quantum dots in Ge/Si nanostructures by pulsed laser irradiation
next article Optical absorption and scattering at one-particle states of charge carriers in semiconductor quantum dots

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Metadata
Title
Persistent IR photoconductivity in InAs/GaAs structures with QD layers
Authors
V. A. Kul’bachinskiĭ
V. A. Rogozin
V. G. Kytin
R. A. Lunin
B. N. Zvonkov
Z. M. Dashevsky
V. A. Casian
Publication date
01-02-2006
Publisher
Nauka/Interperiodica
Published in
Semiconductors / Issue 2/2006
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782606020187

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