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Journal of Materials Science: Materials in Electronics

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01-12-2023

Preparation and characterization of Ni-doped Mg, Si, Ge antifluorite, and their thermoelectric properties

Authors: Choayb Bouhafs, Amina Kahlessenane, Mohamed Chitroub

Published in: Journal of Materials Science: Materials in Electronics | Issue 36/2023

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Abstract

The need for clean energy sources led researchers to increase their research on promising and non-fossil sources, such as thermoelectric materials, and torus this study we put the investigation lens on magnesium silicide and magnesium germanide (Mg\(_2\)Si\(_{0.5}\)Ge\(_{0.5}\)) thermoelectric compound doped by several amount of Ni in order to increase the factor of performance figure of merit ZT. The preparation of the compound was done by solid-state reaction and high-pressure synthesis followed by high-temperature sintering. The analyses of compositional and structural show a good recrystallization of the samples on antifluorite phases and the presence of Ni in the interstitial position, the thermoelectric characteristics were assessed across a temperature range of 300–825 K, as the Ni content increases, there is a significant rise in electrical conductivity (\(\sigma \)), accompanied by a decrease in the Seebeck coefficient (\(\alpha \)). This trend can be attributed to the higher carrier concentration. In spite of the rise in electrical conductivity as Ni content (x) increases, the total thermal conductivity (\(k_{\text{tot}}\)) decreases due to a notable reduction in lattice thermal conductivity (\(k_l\)) and shows the lowest value of about 1.66 W (m K)⁻¹ for Mg\(_2\)Si\(_{0.5}\)Ge\(_{0.5}\)Ni\(_{0.03}\) at 823 K. This decline can be attributed to the pronounced point defect scattering caused by Ni impurities, and consequently, the sample featuring \(x = 0.03\) of Ni attains a maximum ZT value of 0.62 at 823 K.

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Title: Preparation and characterization of Ni-doped Mg, Si, Ge antifluorite, and their thermoelectric properties
Authors: Choayb Bouhafs
Amina Kahlessenane
Mohamed Chitroub
Publication date: 01-12-2023
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 36/2023
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-023-11729-4

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