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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 9/2014

01-09-2014

Preparation and dielectric properties of Si3N4/SiCw composite ceramic

Authors: Weiling Xiao, Peng Xiao, Heng Luo, Wei Zhou, Yang Li

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2014

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Abstract

Gelcasting was employed to fabricate Si3N4/SiC whisker (SiCw) composite ceramics, and the effects of heat-treatment temperature on the length-to-diameter ratio of the whiskers and SiCw content on microwave dielectric properties were studied. Compared with pure SiCw of spherical structure obtained at temperature of 1,750 °C(Ar), pure SiCw treated at 1,600 °C(Ar) showed rod-like structure, higher dielectric properties and more evenly distribution in Si3N4/SiCw composite ceramics. Both the real (ε′) and imaginary (ε″) permittivity of Si3N4/SiC whisker (SiCw) composite ceramics decreased with increasing frequency and increased as the whisker content raised owing to the interface and SiCw playing a role of dipole in the frequency range of 8.2–12.4 GHz. In addition, comparing the ceramics with lower content of SiCw, the reflectivity of the composite ceramics moved to a lower frequency; the maximum absorption peak reached −22.4 dB at the whisker content of 15 wt%.
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Metadata
Title
Preparation and dielectric properties of Si3N4/SiCw composite ceramic
Authors
Weiling Xiao
Peng Xiao
Heng Luo
Wei Zhou
Yang Li
Publication date
01-09-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2133-6

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