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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 5/2014

01-05-2014

Preparation and photovoltaic properties of the composite based on porous In2S3 films and PCPDTBT

Authors: Fei Chen, Dan Deng, Yinlin Lei

Published in: Journal of Materials Science: Materials in Electronics | Issue 5/2014

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Abstract

Large-scale porous indium sulfide (In2S3) films were synthesized via a facile one-step non-template hydrothermal process. A low band gap polymer, namely Poly[4,4 -bis(2-ethylhexyl)cyclopenta[2,1-b:3,4-b′]dithiophene-2,6-diyl-alt-2,1,3-benzothiadia zole-4,7-diyl](PCPDTBT) was synthesized by the Stille coupling reaction. A preliminary photovoltaic performance measurement of the fabricated device based on the as-prepared In2S3 porous film and PCPDTBT(ITO/In2S3 porous film/PCPDTBT/Au) shows a power conversion efficiency of 0.12 % under an illumination of 100 mW/cm−2.
previous article Investigation of chalcopyrite film growth at various temperatures: analyses from top to the bottom of the thin films
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Metadata
Title
Preparation and photovoltaic properties of the composite based on porous In2S3 films and PCPDTBT
Authors
Fei Chen
Dan Deng
Yinlin Lei
Publication date
01-05-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 5/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-1865-7

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