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Published in: Journal of Materials Science: Materials in Electronics 9/2014

01-09-2014

Preparation of indium selenide thin film by electrochemical technique

Authors: M. L. Madugu, L. Bowen, O. K. Echendu, I. M. Dharmadasa

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2014

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Abstract

Indium Selenide (InxSey) layers were potentiostatically deposited on glass/fluorine-doped tin oxide (FTO) substrates, using electro-chemical technique from aqueous solution containing 0.10 M InCl3 and 0.02 M SeO2. The electrodeposits were characterised using a wide range of analytical techniques; X-ray diffraction (XRD), scanning electron microscopy (SEM), Atomic force microscopy (AFM), optical absorption and photoelectrochemical (PEC) cell, for their structural, morphological, optical and electrical properties. The XRD show that the prepared films consist of mixed phases of InSe and In2Se3. The films grown at all voltages in this work were p type in electrical conduction, with bandgaps in the range of (1.70–1.80) eV in both as-deposited and heat-treated forms. The wetting property of InxSey on glass/FTO surfaces indicates that InxSey layers can be helpful as buffer layers or window layers in thin film solar cell development due to their ability to uniformly cover the substrate. The cross-section morphology show smoothening effect of these layers. The experimental results to date are presented in this paper.

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Metadata
Title
Preparation of indium selenide thin film by electrochemical technique
Authors
M. L. Madugu
L. Bowen
O. K. Echendu
I. M. Dharmadasa
Publication date
01-09-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2116-7

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