Quantitative Distribution Analysis of B, As and P in Si for Process Simulation

For the development and improvement of process simulation accurate information about the (depth) distribution of dopant elements (electrically active fraction and total elemental concentration) as a function of process parameters has to be obtained. The analytical requirements for distribution analysis as applied for process simulation are stringent: i)high precision and accuracyii)high detection power and large dynamic rage (concentra-tion range of interest: 1014–5·1021 at/cm3)iii)high depth resolution (shallow p/n-structures in modern devices)