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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS

Authors : H. Frenzel, J. L. Maul, P. Eichinger, E. Frenzel, K. Haberger, H. Ryssel

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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Dynamic segregation of dopants at the SiO2/Si-interface during thermal oxidation is of major interest for process development and modelling in silicon integration circuit technology. The dopant concentrations of interest extend over a wide concentration range, hardly accessible with methods other than SIMS.

previous chapter Behavior of Inorganic Materials on Catalysts Used for Coal Liquefaction
next chapter Low Energy Oxygen Ion Implantation and Ion-Bombardment Induced Oxidation of Silicon, Studied by SIMS, AES, and XPS
Metadata
Title
Quantitative Investigation of As Segregation at the SiO2/Si Interface by SIMS and RBS
Authors
H. Frenzel
J. L. Maul
P. Eichinger
E. Frenzel
K. Haberger
H. Ryssel
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_65