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1984 | OriginalPaper | Chapter
Low Energy Oxygen Ion Implantation and Ion-Bombardment Induced Oxidation of Silicon, Studied by SIMS, AES, and XPS
Authors : P. Sander, U. Kaiser, O. Ganschow, R. Jede, L. Wiedmann, A. Benninghoven
Published in: Secondary Ion Mass Spectrometry SIMS IV
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
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The influence of oxygen ion bombardment and oxygen exposure on secondary ion emission of silicon surfaces seems to be the subject most extensively studied in SIMS literature, but only little is known about the kinetics of oxygen uptake and oxygen depth profiles for low energy oblique incidence primary bombardment. In the present paper we give a preliminary account of our combined method investigations of secondary ion emission of silicon under oxygen load.