Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Semiconductors
Published in: Semiconductors 12/2016

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Resonant features of the terahertz generation in semiconductor nanowires

Authors: V. N. Trukhin, A. D. Bouravleuv, I. A. Mustafin, G. E. Cirlin, D. I. Kuritsyn, V. V. Rumyantsev, S. V. Morosov, J. P. Kakko, T. Huhtio, H. Lipsanen

Published in: Semiconductors | Issue 12/2016

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …
next article On a new method of heterojunction formation in III–V nanowires

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Metadata
Title
Resonant features of the terahertz generation in semiconductor nanowires
Authors
V. N. Trukhin
A. D. Bouravleuv
I. A. Mustafin
G. E. Cirlin
D. I. Kuritsyn
V. V. Rumyantsev
S. V. Morosov
J. P. Kakko
T. Huhtio
H. Lipsanen
Publication date
01-12-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616120241

Other articles of this Issue 12/2016

Semiconductors 12/2016 Go to the issue

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Strained multilayer structures with pseudomorphic GeSiSn layers

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Premium Partner

    Image Credits