Top

Semiconductors

Published in:

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

Authors: D. V. Ishchenko, A. E. Klimov, V. N. Shumsky, V. S. Epov

Published in: Semiconductors | Issue 12/2016

Activate our intelligent search to find suitable subject content or patents.

search-config

AI-assisted search

Off

previous article Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

next article Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 340 Zeitschriften

aus folgenden Fachgebieten:

Bauwesen + Immobilien
Business IT + Informatik
Finance + Banking
Management + Führung
Marketing + Vertrieb
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

inform now

Title: PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity
Authors: D. V. Ishchenko
A. E. Klimov
V. N. Shumsky
V. S. Epov
Publication date: 01-12-2016
Publisher: Pleiades Publishing
Published in: Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI: https://doi.org/10.1134/S1063782616120083

Springer Professional

Please log in to get access to your license.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Springer Professional "Wirtschaft"

Springer Professional "Technik"

Other articles of this Issue 12/2016

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

Strained multilayer structures with pseudomorphic GeSiSn layers

On the radiative recombination and tunneling of charge carriers in SiGe/Si heterostructures with double quantum wells

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Polarization of the photoluminescence of quantum dots incorporated into quantum wires

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

Premium Partner