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Semiconductors
Published in: Semiconductors 12/2016

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Authors: V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin

Published in: Semiconductors | Issue 12/2016

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previous article Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer
next article Asymmetric devices based on carbon nanotubes for terahertz-range radiation detection

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Metadata
Title
Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs
Authors
V. I. Ushanov
V. V. Chaldyshev
V. V. Preobrazhenskii
M. A. Putyato
B. R. Semyagin
Publication date
01-12-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616120253

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