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Semiconductors
Published in: Semiconductors 12/2016

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer

Authors: S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vihrova, A. I. Morozov

Published in: Semiconductors | Issue 12/2016

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Metadata
Title
Physical properties of metal–insulator–semiconductor structures based on n-GaAs with InAs quantum dots deposited onto the surface of an n-GaAs layer
Authors
S. V. Tikhov
O. N. Gorshkov
M. N. Koryazhkina
A. P. Kasatkin
I. N. Antonov
O. V. Vihrova
A. I. Morozov
Publication date
01-12-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616120228

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