Skip to main content
Disciplines
Automotive Business IT + Informatics Construction + Real Estate Electrical Engineering + Electronics Energy + Sustainability Insurance + Risk Finance + Banking Management + Leadership Marketing + Sales Mechanical Engineering + Materials
Events
DE
EN
Books
Journals
Topic Page
Marketing
Start single access now
Access for companies
EXTENDED SEARCH
Log in
Top
Semiconductors
Published in: Semiconductors 12/2016

01-12-2016 | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures

Authors: S. V. Gudina, Yu. G. Arapov, A. P. Saveliev, V. N. Neverov, S. M. Podgornykh, N. G. Shelushinina, M. V. Yakunin, I. S. Vasil’evskii, A. N. Vinichenko

Published in: Semiconductors | Issue 12/2016

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …
previous article PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity
next article Polarization of the photoluminescence of quantum dots incorporated into quantum wires

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

inform now

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

inform now
Metadata
Title
Quantum Hall effect and hopping conductivity in n-InGaAs/InAlAs nanoheterostructures
Authors
S. V. Gudina
Yu. G. Arapov
A. P. Saveliev
V. N. Neverov
S. M. Podgornykh
N. G. Shelushinina
M. V. Yakunin
I. S. Vasil’evskii
A. N. Vinichenko
Publication date
01-12-2016
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 12/2016
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782616120071

Other articles of this Issue 12/2016

Semiconductors 12/2016 Go to the issue

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Mercury vacancies as divalent acceptors in Hg y Te1 – y /Cd x Hg1 – x Te structures with quantum wells

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

PbSnTe:In compound: Electron capture levels, galvanomagnetic properties, and THz sensitivity

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Effect of random inhomogeneities in the spatial distribution of radiation-induced defect clusters on carrier transport through the thin base of a heterojunction bipolar transistor upon neutron irradiation

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Polarization of the induced THz emission of donors in silicon

XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Premium Partner

    Image Credits