Robust Method for Fast and Accurate Simulation of Random Dopant Fluctuation-Induced Vth Variation in MOSFETs with Arbitrary Complex Doping Distribution

We present a robust, fast, and accurate method for prediction of threshold voltage fluctuations induced by random placement of dopants in the MOSFETs. It is used to accurately predict the threshold voltage fluctuation for an analog transistor design. The method allows easy coupling to a process and device simulation framework, and, hence, evaluation of dopant induced threshold voltage fluctuation at the transistor design stage. The methodology is also used to compare the threshold voltage fluctuation in ultra-short channel devices having different profile architectures.