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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 9/2016

12-05-2016

Sb2Se3 solar cells prepared with selenized dc-sputtered metallic precursors

Authors: Chenchen Yuan, Xin Jin, Guoshun Jiang, Weifeng Liu, Changfei Zhu

Published in: Journal of Materials Science: Materials in Electronics | Issue 9/2016

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Abstract

Sb2Se3 with suitable bandgap and non-toxic, abundant composition represents a promising absorber material as a replacement for Cu2ZnSnS4 and Cu(In,Ga)Se2 for thin film solar cells. In this paper, we investigated the effect of annealing temperature on selenizing metal precursor deposited by sputtering. With optimized temperature, the best performance of the devices achieved the efficiency of 0.72 % with an open circuit voltage of 368 mV. This study provide the guideline to fabricate Sb2Se3 thin film solar cell as the same structure as CIGS.
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Metadata
Title
Sb2Se3 solar cells prepared with selenized dc-sputtered metallic precursors
Authors
Chenchen Yuan
Xin Jin
Guoshun Jiang
Weifeng Liu
Changfei Zhu
Publication date
12-05-2016
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 9/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-016-4917-3

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