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Macroscopic Quantum Carrier Transport Modeling Read chapter Read first chapter

2001 | OriginalPaper | Chapter

Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET

Authors : Huang Chung-Kuang, Goldsman Neil

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

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We present a method of modeling quantum confinement effects in MOSFET’s by solving the Schrödinger, Boltzmann, Poisson and current-continuity equations self-consistently.

previous chapter Analysis of Gate Tunneling Current in MOS Structures using Quantum Mechanical Simulation
next chapter Boundary Condition Models for Terminal Current Fluctuations
Metadata
Title
Self-Consistent Solution of Schrödinger Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET
Authors
Huang Chung-Kuang
Goldsman Neil
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_33