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Semiconductors
Published in: Semiconductors 2/2013

01-02-2013 | IX International Conference “Silicon-2012”, St. Petersburg, July 9–13, 2012

Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

Authors: Yu. A. Astrov, S. A. Lynch, V. B. Shuman, L. M. Portsel, A. A. Makhova, A. N. Lodygin

Published in: Semiconductors | Issue 2/2013

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previous article Damage formation in Si under irradiation with PF n + ions of different energies
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Metadata
Title
Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy
Authors
Yu. A. Astrov
S. A. Lynch
V. B. Shuman
L. M. Portsel
A. A. Makhova
A. N. Lodygin
Publication date
01-02-2013
Publisher
SP MAIK Nauka/Interperiodica
Published in
Semiconductors / Issue 2/2013
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782613020048

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