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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-Doped GaAs

Authors : S. Kurosawa, Y. Homma, T. Tanaka, M. Yamawaki

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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As SIMS has a very high sensitivity, it is useful for analyzing low concentrations of impurities in GaAs [1]. Usually, ion-implanted samples are used as standards for SIMS quantitative analysis. However, secondary ion yields of various impurities in GaAs have not been investigated, because for GaAs, there are no standard samples having certified values such as with NBS standard samples.

previous chapter The Role of Standards in Secondary Ion Mass Spectrometry
next chapter SIMS Quantitative Analysis of Gallium in Silicon by Using Ion-Implanted Samples for Standards
Metadata
Title
SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-Doped GaAs
Authors
S. Kurosawa
Y. Homma
T. Tanaka
M. Yamawaki
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_31