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Erschienen in:
1984 | OriginalPaper | Buchkapitel
SIMS Quantitative Analysis of Impurities in GaAs Using Multi-Element-Doped GaAs
verfasst von : S. Kurosawa, Y. Homma, T. Tanaka, M. Yamawaki
Erschienen in: Secondary Ion Mass Spectrometry SIMS IV
Verlag: Springer Berlin Heidelberg
Enthalten in: Professional Book Archive
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As SIMS has a very high sensitivity, it is useful for analyzing low concentrations of impurities in GaAs [1]. Usually, ion-implanted samples are used as standards for SIMS quantitative analysis. However, secondary ion yields of various impurities in GaAs have not been investigated, because for GaAs, there are no standard samples having certified values such as with NBS standard samples.