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Fundamentals of Sputtering Read chapter Read first chapter

1984 | OriginalPaper | Chapter

SIMS Study of Surface Contamination Due to Ion Implantation

Authors : A. C. Yen, A. F. Puttlitz, W. A. Rausch

Published in: Secondary Ion Mass Spectrometry SIMS IV

Publisher: Springer Berlin Heidelberg

Included in: Professional Book Archive

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Silicon surface contamination due to ion implantation was found by using secondary ion mass spectroscopy (SIMS). Silicon wafers were prepared by keeping their surface condition as identical as possible. Only minimal, necessary different process steps were received by the samples. All experimental data were analyzed on a comparative basis. Effect of incident ion mass on sputtering phenomena of the target material is discussed.

previous chapter Quantification of Silicon Wafer Cleaning Using Secondary Ion Mass Spectroscopy
next chapter Quantitative Analysis of Amorphous Silicon Nitride Using SIMS
Metadata
Title
SIMS Study of Surface Contamination Due to Ion Implantation
Authors
A. C. Yen
A. F. Puttlitz
W. A. Rausch
Copyright Year
1984
Publisher
Springer Berlin Heidelberg
Book
Secondary Ion Mass Spectrometry SIMS IV

Print ISBN: 978-3-642-82258-2

Electronic ISBN: 978-3-642-82256-8

Copyright Year: 1984

DOI
https://doi.org/10.1007/978-3-642-82256-8_72