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Published in:
1984 | OriginalPaper | Chapter
Quantitative Analysis of Amorphous Silicon Nitride Using SIMS
Authors : T. Shima, M. Koyama
Published in: Secondary Ion Mass Spectrometry SIMS IV
Publisher: Springer Berlin Heidelberg
Included in: Professional Book Archive
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Plasma silicon nitride film has been widely applied to a passivation layer of photo-electric devices. Since its physical and electrical properties are strongly dependent on a variety of deposition parameters, it is important to evaluate the film composition to control the deposition process. From this point of view, we utilized SIMS for the quantitative estimation of nitrogen in silicon nitride using Ar+ primary ion beam. Results are compared with those obtained by XPS.