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Journal of Electronic Materials
Published in: Journal of Electronic Materials 9/2022

21-06-2022 | Original Research Article

Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors

Authors: Viswanath G. Akkili, N. Prudhvi Raju, R. Thangavel, Viranjay M. Srivastava

Published in: Journal of Electronic Materials | Issue 9/2022

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Abstract

Tin monoxide (SnO) has gained considerable attention in recent years because of its high hole mobility, transparency, and possibility for mass production. This study investigates the simulation of p-channel SnO thin-film transistors (TFTs) using cylindrical geometry using both a 3D numerical simulation approach and theoretical insights. To analyze the electrical performance of the devices, the gate metal work function varied from 4.4 eV to 5.0 eV. Among the simulated cylindrical TFTs (CTFTs), the 4.4 eV device shows maximum field-effect mobility of 45.39 cm2/V s and a threshold voltage (Vth) of 1.38 V. This is the highest value for p-channel TFTs. In addition, the simulated characteristics are compared with experimental characteristics by adjusting the defect parameter values. A simulation of the leakage current density and gate capacitance was also performed to estimate the dielectric layer quality. The results were determined to be 8.5 × 10-10 A/cm2 and 7.2 × 10-7 F/cm2 for 4.4 eV CTFTs, respectively. Theoretically, first-principles calculations have been performed within density functional theory (DFT) using Tran–Blaha modified Becke–Johnson (TB-mBJ) functionals. The electronic band structure calculations estimate the electronic band gap as 2.2 eV.

Graphical Abstract

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Metadata
Title
Simulation Analysis of High Field-Effect Mobility in p-Channel-Based Cylindrical Thin-Film Transistors
Authors
Viswanath G. Akkili
N. Prudhvi Raju
R. Thangavel
Viranjay M. Srivastava
Publication date
21-06-2022
Publisher
Springer US
Published in
Journal of Electronic Materials / Issue 9/2022
Print ISSN: 0361-5235
Electronic ISSN: 1543-186X
DOI
https://doi.org/10.1007/s11664-022-09753-x

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