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Optical and Quantum Electronics

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01-07-2013

Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model

Authors: Chang Sheng Xia, Z. M. Simon Li, Yang Sheng, Li Wen Cheng, Wei Da Hu, Wei Lu

Published in: Optical and Quantum Electronics | Issue 7/2013

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Abstract

Blue InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) are simulated by the APSYS software with a non-local quantum well transport model which is used to describe the phenomenon that carriers can fly over the quantum wells directly. The simulation results based on this model are in good agreement with the experiment and show its significant influence on the output power, carrier transport, peak wavelength and current crowding effect of the InGaN/GaN MQW LEDs, indicating that the non-local quantum well transport plays an important role in these devices.

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Title: Simulation of InGaN/GaN light-emitting diodes with a non-local quantum well transport model
Authors: Chang Sheng Xia
Z. M. Simon Li
Yang Sheng
Li Wen Cheng
Wei Da Hu
Wei Lu
Publication date: 01-07-2013
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 7/2013
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-012-9647-z

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