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Journal of Computational Electronics

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23-02-2019

Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability

Authors: Mohamed Labed, Nouredine Sengouga

Published in: Journal of Computational Electronics | Issue 2/2019

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Abstract

Indium-gallium-zinc oxide (IGZO) thin films have attracted significant attention for application in thin-film transistors (TFTs) due to their specific characteristics, such as high mobility and transparency. The performance of a-IGZO TFTs with four different insulators (SiO₂ Si₃N₄, Al₂O₃ and HfO₂) is examined using a numerical simulator (Silvaco Atlas). It is found that the output performance is significantly enhanced with high relative permittivity of the insulator. HfO₂ gives the best performance: lower threshold voltage 0.23 V and subthreshold 0.09 V dec⁻¹, higher field-effect mobility 13.73 cm² s⁻¹ V⁻¹ and on current (I_on) and I_on/I_off ratio \(2.81 \times 10^{ - 6}\) A, \(5.06 \times 10^{12}\), respectively. Therefore, HfO₂ gate showed high stability compared with other gate insulator materials.

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Title: Simulation of the influence of the gate dielectric on amorphous indium-gallium-zinc oxide thin-film transistor reliability
Authors: Mohamed Labed
Nouredine Sengouga
Publication date: 23-02-2019
Publisher: Springer US
Published in: Journal of Computational Electronics / Issue 2/2019
Print ISSN: 1569-8025
Electronic ISSN: 1572-8137
DOI: https://doi.org/10.1007/s10825-019-01316-4

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