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2001 | OriginalPaper | Chapter

Statistical Analysis of VLSI Using TCAD

Author : Naoyuki Shigyo

Published in: Simulation of Semiconductor Processes and Devices 2001

Publisher: Springer Vienna

Included in: Professional Book Archive

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Statistical process fluctuations influence upon device and circuit performance of VLSI with device miniaturization. Thus, robust process, device and circuit designs are needed. This article describes the statistical analysis of MOSFET and interconnect using Technology CAD (TCAD).

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Metadata
Title
Statistical Analysis of VLSI Using TCAD
Author
Naoyuki Shigyo
Copyright Year
2001
Publisher
Springer Vienna
Book
Simulation of Semiconductor Processes and Devices 2001

Print ISBN: 978-3-7091-7278-0

Electronic ISBN: 978-3-7091-6244-6

Copyright Year: 2001

DOI
https://doi.org/10.1007/978-3-7091-6244-6_44