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Journal of Sol-Gel Science and Technology
Published in: Journal of Sol-Gel Science and Technology 2/2015

01-05-2015 | Original Paper

Structural and dielectric properties of boron-doped and un-doped mullite thin films

Authors: Shumaila Islam, Saira Riaz, Rosly Abdul Rahman, Shahzad Naseem, Zulkafli Ottoman

Published in: Journal of Sol-Gel Science and Technology | Issue 2/2015

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Abstract

A sol–gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 °C for un-doped and at 350 °C for doped mullite films. Small crystallite size ~11 nm and low dielectric value ~5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, ~6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.
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Metadata
Title
Structural and dielectric properties of boron-doped and un-doped mullite thin films
Authors
Shumaila Islam
Saira Riaz
Rosly Abdul Rahman
Shahzad Naseem
Zulkafli Ottoman
Publication date
01-05-2015
Publisher
Springer US
Published in
Journal of Sol-Gel Science and Technology / Issue 2/2015
Print ISSN: 0928-0707
Electronic ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-014-3475-5

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