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Journal of Sol-Gel Science and Technology
Erschienen in: Journal of Sol-Gel Science and Technology 2/2015

01.05.2015 | Original Paper

Structural and dielectric properties of boron-doped and un-doped mullite thin films

verfasst von: Shumaila Islam, Saira Riaz, Rosly Abdul Rahman, Shahzad Naseem, Zulkafli Ottoman

Erschienen in: Journal of Sol-Gel Science and Technology | Ausgabe 2/2015

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Abstract

A sol–gel technique being simple, low cost and application oriented has been used to synthesize doped and un-doped mullite sols. These films have been spin-coated onto copper substrates. Effect of boron doping on the transformation kinetics of mullite was studied by preparing two sols with ratio Al/Si/B = 3/1/0 and Al/Si/B = 3/1/0.5. Surface morphology of thermally stable films showed uniformity in doped and un-doped samples. X-ray diffractometer results revealed orthorhombic mullite formation from both sols at a temperature of 500 °C for un-doped and at 350 °C for doped mullite films. Small crystallite size ~11 nm and low dielectric value ~5.84 (at 3 MHz) were observed in boron-doped films. Un-doped mullite films also showed relatively low dielectric constant, ~6.36, as compared to the previously reported values. The stoichiometry of films was confirmed by EDX and spark source mass spectrometry.
Vorheriger Artikel Hydrophobic surfaces with tunable dynamic wetting properties via colloidal assembly of silica microspheres and gold nanoparticles
Nächster Artikel The effect of Mn/Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process

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Metadaten
Titel
Structural and dielectric properties of boron-doped and un-doped mullite thin films
verfasst von
Shumaila Islam
Saira Riaz
Rosly Abdul Rahman
Shahzad Naseem
Zulkafli Ottoman
Publikationsdatum
01.05.2015
Verlag
Springer US
Erschienen in
Journal of Sol-Gel Science and Technology / Ausgabe 2/2015
Print ISSN: 0928-0707
Elektronische ISSN: 1573-4846
DOI
https://doi.org/10.1007/s10971-014-3475-5

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