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Published in: Journal of Materials Science: Materials in Electronics 7/2015

01-07-2015

Structural and optical properties of ZnO thin films deposited by sol–gel method: effect of stabilizer concentration

Authors: Deep Shikha, Vimal Mehta, S. C. Sood, Jeewan Sharma

Published in: Journal of Materials Science: Materials in Electronics | Issue 7/2015

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Abstract

Nanocrystalline thin films of ZnO were successfully deposited on Si substrate via sol–gel method using zinc acetate dehydrate as a precursor and 2-methoxy ethanol as a solvent. The effect of stabilizer concentration on the structural and optical properties of the ZnO thin film was investigated as the stabilizer concentration affects the growth orientation of ZnO thin films prepared by sol–gel method. The growth in (002) plane of hexagonal structure is preferred in many applications as the 2-dimensional Zn atoms population is highest in this orientation. The growth of (002)-oriented ZnO films was optimized with the concentration of the stabilizer (triethanolamine). The crystal structures of the samples were analyzed using X-ray diffractometer confirming the polycrystalline nature and hexagonal structure of films. In order to estimate the preferential crystallite orientation quantitatively, the texture coefficient (Tc) was calculated. The particle size and strain was also found to change with concentration of stabilizer. SEM results confirm the formation of nanocrystalline thin films with homogeneous morphology. Photoluminescence characteristics show a direct band gap transition which shifts towards lower wavelength with increase in stabilizer concentration. It was observed that the stabilizer concentration is the most important factor to grow a highly (002)-oriented ZnO film along c-axis.

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Metadata
Title
Structural and optical properties of ZnO thin films deposited by sol–gel method: effect of stabilizer concentration
Authors
Deep Shikha
Vimal Mehta
S. C. Sood
Jeewan Sharma
Publication date
01-07-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 7/2015
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3000-9

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