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Semiconductors
Published in: Semiconductors 2/2020

01-02-2020 | CARBON SYSTEMS

Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride

Authors: A. V. Baglov, E. B. Chubenko, A. A. Hnitsko, V. E. Borisenko, A. A. Malashevich, V. V. Uglov

Published in: Semiconductors | Issue 2/2020

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Abstract

Interrelationship between the structure and optical properties of graphite-like semiconductor carbon nitride produced by the heat treatment of thiocarbamide in an oxygen-containing medium at temperatures in the range from 400°C to 625°C is established. It is found that the maximum of the photoluminescence band shifts from 417 to 494 nm and simultaneously broadens, as the temperature of synthesis is elevated to 625°C. This effect is attributed to doping with oxygen and to the formation of defects as a consequence of decomposition of the already synthesized material with increasing temperature.
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Metadata
Title
Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride
Authors
A. V. Baglov
E. B. Chubenko
A. A. Hnitsko
V. E. Borisenko
A. A. Malashevich
V. V. Uglov
Publication date
01-02-2020
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 2/2020
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S1063782620020049

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