Ausgabe 2/2020
Inhalt (20 Artikel)
Thermal Conductivity of Cu2ZnGe1 –xSnxSe4 Alloys
I. V. Bodnar
Negative Differential Conductivity of Lanthanum-Oxide-Based Structures
A. Igityan, N. Aghamalyan, R. Hovsepyan, S. Petrosyan, G. Badalyan, I. Gambaryan, A. Papikyan, Y. Kafadaryan
Fabrication and Analysis of the Current Transport Mechanism of Ni/n-GaN Schottky Barrier Diodes through Different Models
S. Kumar, M. V. Kumar, S. Krishnaveni
Profiling Mobility Components near the Heterointerfaces of Thin Silicon Films
E. G. Zaitseva, O. V. Naumova, B. I. Fomin
Ge/Si Core/Shell Quantum Dots in an Alumina Matrix: Influence of the Annealing Temperature on the Optical Properties
O. M. Sreseli, N. A. Bert, V. N. Nevedomskii, A. I. Lihachev, I. N. Yassievich, A. V. Ershov, A. V. Nezhdanov, A. I. Mashin, B. A. Andreev, A. N. Yablonsky
Molecular States of Composite Fermions in Self-Organized InP/GaInP Quantum Dots in Zero Magnetic Field
A. M. Mintairov
Influence of Radiation Defects Induced by Low-Energy Protons at a Temperature of 83 K on the Characteristics of Silicon Photoelectric Structures
N. M. Bogatov, L. R. Grigorian, A. I. Kovalenko, M. S. Kovalenko, F. A. Kolokolov, L. S. Lunin
Structural and Dielectric Study of Thin Amorphous Layers of the Ge–Sb–Te System Prepared by RF Magnetron Sputtering
R. A. Castro-Arata, V. M. Stozharov, D. M. Dolginsev, A. A. Kononov, Y. Saito, P. Fons, J. Tominaga, N. I. Anisimova, A. V. Kolobov
Dielectric Spectroscopy and Features of the Mechanism of the Semiconductor–Metal Phase Transition in VO2 Films
A. V. Ilinskiy, R. A. Kastro, M. E. Pashkevich, E. B. Shadrin
Effect of Temperature on the Morphology of Planar GaAs Nanowires (Simulation)
A. A. Spirina, N. L. Shwartz
Energy-Efficient Gas Sensors Based on Nanocrystalline Indium Oxide
E. A. Forsh, E. A. Guseva
Exactly Solvable Model Problem on a Graphene Nanoribbon with Zigzag Edges
S. Yu. Davydov, A. V. Zubov
Structural and Photoluminescence Properties of Graphite-Like Carbon Nitride
A. V. Baglov, E. B. Chubenko, A. A. Hnitsko, V. E. Borisenko, A. A. Malashevich, V. V. Uglov
Model of the Negative-Bias Temperature Instability of p-MOS Transistors
O. V. Aleksandrov
Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation
O. V. Aleksandrov, S. A. Mokrushina
Effect of Temperature on the Characteristics of 4H-SiC UV Photodetectors
E. V. Kalinina, G. N. Violina, I. P. Nikitina, E. V. Ivanova, V. V. Zabrodski, M. Z. Shvarts, S. A. Levina, A. V. Nikolaev
Long-Wavelength LEDs in the Atmospheric Transparency Window of 4.6–5.3 μm
V. V. Romanov, E. V. Ivanov, A. A. Pivovarova, K. D. Moiseev, Yu. P. Yakovlev
Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling
N. M. Lebedeva, N. D. Il’inskaya, P. A. Ivanov
Comparative Analysis of Injection Microdisk Lasers Based on InGaAsN Quantum Wells and InAs/InGaAs Quantum Dots
E. I. Moiseev, M. V. Maximov, N. V. Kryzhanovskaya, O. I. Simchuk, M. M. Kulagina, S. A. Kadinskaya, M. Guina, A. E. Zhukov
Investigation of the Influences of Post-Thermal Annealing on Physical Properties of TiO2 Thin Films Deposited by RF Sputtering
H. E. Doghmane, T. Touam, A. Chelouche, F. Challali, B. Bordji