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Erschienen in:
01.02.2020 | NONELECTRONIC PROPERTIES OF SEMICONDUCTORS (ATOMIC STRUCTURE, DIFFUSION)
Thermal Conductivity of Cu2ZnGe1 –xSnxSe4 Alloys
Erschienen in: Semiconductors | Ausgabe 2/2020
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Abstract
Cu2ZnGeSe4 and Cu2ZnSnSe4 and Cu2ZnGe1 –xSnxSe4-alloy crystals are grown by the Bridgman method (vertical variant). The composition and structure of the crystals are determined. It is established that both the initial compounds and their alloys crystalize with the formation of tetragonal structure. The unit-cell parameters a and c of the crystals are calculated, and the dependences of these parameters on the composition of the alloys are constructed. It is shown that, under variations in the composition parameter x, the parameters a and c vary in accordance with Vegard’s law. The thermal conductivity of the Cu2ZnGeSe4 and Cu2ZnSnSe4 compounds and Cu2ZnGe1 –xSnxSe4 alloys is measured in the temperature range 300–600 K. It is found that the thermal conductivity varies with x, with a minimum for the medium composition.