Skip to main content
Top
Published in: Journal of Materials Science: Materials in Electronics 11/2014

01-11-2014

Structural characterization and frequency response of sol–gel derived Bi3/2MgNb3/2O7 thin films

Authors: H. L. Dong, L. X. Li, S. H. Yu, Y. X. Jin, D. Xu

Published in: Journal of Materials Science: Materials in Electronics | Issue 11/2014

Log in

Activate our intelligent search to find suitable subject content or patents.

search-config
loading …

Abstract

The Bi3/2MgNb3/2O7 (BMN) thin films were prepared via a modified sol–gel process on glass substrates at various post-annealing temperatures. The crystalline structure, morphology and frequency response have been investigated systematically. The X-ray diffraction results indicated that the BMN thin films had different orientations depending on post-annealing temperature. Thin films annealed above 650 °C presented well crystallized cubic pyrochlore structure with (222) orientation, and (400) preferentially oriented were observed when they were annealed below 600 °C. The surface morphology images of the BMN thin films revealed different grain size and grain size distribution, and the average grain size increased from 28.3 to 37.0 nm as the post-annealing temperature increasing. The low frequency dielectric properties of the BMN thin films were closely correlated with the (222) orientation, which was favorable to enhanced dielectric constant and tunability. The high-frequency optical measurements revealed an average transmittance (T av ) varying between 76.6 and 82.2 % and band gap energy (E g ) ranging from 3.40 to 3.44 as a function of the temperature and the crystallite size. Thin film annealed at 700 °C possessed the best crystallinity and highest (222) orientation, and showed the best electrical properties, with a dielectric constant of 105 at 1 MHz, dielectric tunability of 25.8 %, and an average optical transmittance of 82.2 % in the visible range (400–800 nm), making it promising for optical/electronic tunable devices applications.

Dont have a licence yet? Then find out more about our products and how to get one now:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literature
1.
go back to reference W. Ren, S. Trolier-McKinstry, C.A. Randall, T.R. Shrout, J. Appl. Phys. 89, 767–774 (2001)CrossRef W. Ren, S. Trolier-McKinstry, C.A. Randall, T.R. Shrout, J. Appl. Phys. 89, 767–774 (2001)CrossRef
2.
3.
go back to reference K. Sudheendran, K.C.J. Raju, J. Mater. Sci.: Mater. Electron. 22, 626–630 (2011) K. Sudheendran, K.C.J. Raju, J. Mater. Sci.: Mater. Electron. 22, 626–630 (2011)
4.
go back to reference L.H. Yang, G.S. Wang, X.L. Dong, F. Ponchel, D. Rémiens, J. Am. Chem. Soc. 94, 2262–2265 (2011) L.H. Yang, G.S. Wang, X.L. Dong, F. Ponchel, D. Rémiens, J. Am. Chem. Soc. 94, 2262–2265 (2011)
5.
go back to reference T. Ning, Y. Zhou, H. Lu, D. Zhang, G. Yang, H. Wang, Thin Solid Films 517, 4626–4628 (2009)CrossRef T. Ning, Y. Zhou, H. Lu, D. Zhang, G. Yang, H. Wang, Thin Solid Films 517, 4626–4628 (2009)CrossRef
7.
go back to reference S.X. Wang, M.S. Guo, X.H. Sun, T. Liu, M.Y. Li, X.Z. Zhao, Appl. Phys. Lett. 89, 212907 (2006)CrossRef S.X. Wang, M.S. Guo, X.H. Sun, T. Liu, M.Y. Li, X.Z. Zhao, Appl. Phys. Lett. 89, 212907 (2006)CrossRef
8.
go back to reference X. Zhang, W. Ren, P. Shi, J. Mater. Sci.: Mater. Electron. 24, 1595–1600 (2013) X. Zhang, W. Ren, P. Shi, J. Mater. Sci.: Mater. Electron. 24, 1595–1600 (2013)
9.
go back to reference S.W. Jiang, Y.R. Li, R.G. Li, N.D. Xiong, L.F. Tan, X.Z. Liu, B.W. Tao, Appl. Phys. Lett. 94, 162908 (2009)CrossRef S.W. Jiang, Y.R. Li, R.G. Li, N.D. Xiong, L.F. Tan, X.Z. Liu, B.W. Tao, Appl. Phys. Lett. 94, 162908 (2009)CrossRef
10.
go back to reference L.B. Gao, S.W. Jiang, R.G. Li, Y.R. Li, J. Alloys. Compd. 600, 107–110 (2014)CrossRef L.B. Gao, S.W. Jiang, R.G. Li, Y.R. Li, J. Alloys. Compd. 600, 107–110 (2014)CrossRef
11.
go back to reference L.B. Gao, S.W. Jiang, R.G. Li, B. Li, Y.R. Li, Appl. Surf. Sci. 284, 523–526 (2013)CrossRef L.B. Gao, S.W. Jiang, R.G. Li, B. Li, Y.R. Li, Appl. Surf. Sci. 284, 523–526 (2013)CrossRef
12.
go back to reference L.B. Gao, S.W. Jiang, R.G. Li, B. Li, Y.R. Li, Thin Solid Films 520, 6295–6298 (2012)CrossRef L.B. Gao, S.W. Jiang, R.G. Li, B. Li, Y.R. Li, Thin Solid Films 520, 6295–6298 (2012)CrossRef
13.
go back to reference H. Gao, Y. Lu, Y. Liu, H. Qian, C. Ma, J. Ding, J. Mater. Sci.: Mater. Electron. 24, 5085–5090 (2013) H. Gao, Y. Lu, Y. Liu, H. Qian, C. Ma, J. Ding, J. Mater. Sci.: Mater. Electron. 24, 5085–5090 (2013)
14.
go back to reference L.X. Li, X.Y. Zhang, L.L. Ji, P.F. Ning, Q.W. Liao, Ceram. Int. 38, 3541–3545 (2012)CrossRef L.X. Li, X.Y. Zhang, L.L. Ji, P.F. Ning, Q.W. Liao, Ceram. Int. 38, 3541–3545 (2012)CrossRef
15.
go back to reference S.H. Yu, L.X. Li, H.L. Dong, D. Xu, Y.X. Jin, Mater. Lett. 116, 50–52 (2014)CrossRef S.H. Yu, L.X. Li, H.L. Dong, D. Xu, Y.X. Jin, Mater. Lett. 116, 50–52 (2014)CrossRef
16.
go back to reference S.B. Majumder, S. Bhaskar, R.S. Katiyar, Integr. Ferroelectr. 42, 245–292 (2002)CrossRef S.B. Majumder, S. Bhaskar, R.S. Katiyar, Integr. Ferroelectr. 42, 245–292 (2002)CrossRef
17.
go back to reference B.M. Xu, R.G. Polcawich, S. Trolier-Mckinstry, T.H. Ye, L.E. Cross, J.J. Bernstein, R. Miller, Appl. Phys. Lett. 75, 4180–4182 (1999)CrossRef B.M. Xu, R.G. Polcawich, S. Trolier-Mckinstry, T.H. Ye, L.E. Cross, J.J. Bernstein, R. Miller, Appl. Phys. Lett. 75, 4180–4182 (1999)CrossRef
18.
go back to reference Y. Liu, A.S. Nagra, E.G. Erker, P. Periaswamy, T.R. Taylor, J. Speck, R.A. York, IEEE Microw. Guided Wave Lett. 10, 448–450 (2000)CrossRef Y. Liu, A.S. Nagra, E.G. Erker, P. Periaswamy, T.R. Taylor, J. Speck, R.A. York, IEEE Microw. Guided Wave Lett. 10, 448–450 (2000)CrossRef
19.
go back to reference S.S. Gevorgian, T. Matinsson, P.L.J. Linner, E.L. Kollberg, IEEE Trans. Microw. Technol. 44, 896–904 (1996)CrossRef S.S. Gevorgian, T. Matinsson, P.L.J. Linner, E.L. Kollberg, IEEE Trans. Microw. Technol. 44, 896–904 (1996)CrossRef
20.
go back to reference Y.L. Cheng, Y. Wang, H.L.W. Chan, C.L. Choy, Microelectron. Eng. 66, 872–879 (2003)CrossRef Y.L. Cheng, Y. Wang, H.L.W. Chan, C.L. Choy, Microelectron. Eng. 66, 872–879 (2003)CrossRef
21.
go back to reference P.F. Ning, L.X. Li, W.S. Xia, L.J. Ji, P. Zhang, J. Sol-Gel. Sci. Technol. 63, 395–399 (2012)CrossRef P.F. Ning, L.X. Li, W.S. Xia, L.J. Ji, P. Zhang, J. Sol-Gel. Sci. Technol. 63, 395–399 (2012)CrossRef
22.
go back to reference H. Wang, X. Wang, X. Yao, in Proceedings of the 4th International Meeting on Electroceramics, Aachen, Germany, 1994, p. 143 H. Wang, X. Wang, X. Yao, in Proceedings of the 4th International Meeting on Electroceramics, Aachen, Germany, 1994, p. 143
23.
go back to reference J. Lu, Z.Q. Chen, T.R. Taylor, S. Stemmer, J. Vac. Sci. Technol., A 21, 1745–1751 (2003)CrossRef J. Lu, Z.Q. Chen, T.R. Taylor, S. Stemmer, J. Vac. Sci. Technol., A 21, 1745–1751 (2003)CrossRef
24.
26.
go back to reference C.S. Barret, T.B. Massalski, Structure of Metals (Pergamon Press, Oxford, 1980) C.S. Barret, T.B. Massalski, Structure of Metals (Pergamon Press, Oxford, 1980)
28.
29.
31.
go back to reference C. Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao, Thin Solid Films 517, 3265–3268 (2009)CrossRef C. Li, M. Furuta, T. Matsuda, T. Hiramatsu, H. Furuta, T. Hirao, Thin Solid Films 517, 3265–3268 (2009)CrossRef
32.
go back to reference R.S. Krishnan, R. Srivivasan, S. Devanarayanan, (Pergamon, New York, 1979) R.S. Krishnan, R. Srivivasan, S. Devanarayanan, (Pergamon, New York, 1979)
34.
go back to reference R. Carel, C.V. Thompson, Ph.D. Thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology (1995) R. Carel, C.V. Thompson, Ph.D. Thesis, Department of Materials Science and Engineering, Massachusetts Institute of Technology (1995)
35.
36.
37.
go back to reference O.G. Vendik, S.P. Zubko, M.A. Nikol’skii, Tech. Phys. 44, 349–355 (1999)CrossRef O.G. Vendik, S.P. Zubko, M.A. Nikol’skii, Tech. Phys. 44, 349–355 (1999)CrossRef
38.
go back to reference M. Sazegar, Y. Zheng, C. Kohler, IEEE Trans. Antennas Propag. 60, 5690–5699 (2012)CrossRef M. Sazegar, Y. Zheng, C. Kohler, IEEE Trans. Antennas Propag. 60, 5690–5699 (2012)CrossRef
39.
go back to reference G.W. Farnell, I.A. Cermak, P. Silvester, S.K. Wong, IEEE Trans. Sonics Ultrason. 17, 188–195 (1970)CrossRef G.W. Farnell, I.A. Cermak, P. Silvester, S.K. Wong, IEEE Trans. Sonics Ultrason. 17, 188–195 (1970)CrossRef
40.
go back to reference R.L. Thayer, C.A. Randall, S. Trolier-McKinstry, J. Appl. Phys. 94, 1941–1947 (2003)CrossRef R.L. Thayer, C.A. Randall, S. Trolier-McKinstry, J. Appl. Phys. 94, 1941–1947 (2003)CrossRef
41.
go back to reference K. Sudheendran, K.J. Raju, M.K. Singh, R.S. Katiyar, J. Appl. Phys. 104, 104104 (2008)CrossRef K. Sudheendran, K.J. Raju, M.K. Singh, R.S. Katiyar, J. Appl. Phys. 104, 104104 (2008)CrossRef
42.
go back to reference K.H. Ko, D.H. Back, Y.P. Hong, J.H. Moon, J. Electroceram. 14, 171–175 (2005)CrossRef K.H. Ko, D.H. Back, Y.P. Hong, J.H. Moon, J. Electroceram. 14, 171–175 (2005)CrossRef
43.
44.
go back to reference S. Kamba, V. Porokhonskyy, A. Pashkin, V. Bovtun, J. Petzelt, J.C. Nino, S. Trolier-McKinstry, M.T. Lanagan, C.A. Randall, Phys. Rev. B. 66, 054106 (2002)CrossRef S. Kamba, V. Porokhonskyy, A. Pashkin, V. Bovtun, J. Petzelt, J.C. Nino, S. Trolier-McKinstry, M.T. Lanagan, C.A. Randall, Phys. Rev. B. 66, 054106 (2002)CrossRef
45.
go back to reference W.G. Driscoll, W. Vaughan, Handbook of Optics (McGraw-Hill, New York, 1978) W.G. Driscoll, W. Vaughan, Handbook of Optics (McGraw-Hill, New York, 1978)
46.
go back to reference J.C. Manifacier, J. Gasiot, J.P. Fillard, J. Phys. E. 9, 1002–1004 (1976)CrossRef J.C. Manifacier, J. Gasiot, J.P. Fillard, J. Phys. E. 9, 1002–1004 (1976)CrossRef
47.
48.
go back to reference J. Callaway, Quantum Theory of the Solid State: Optical Property (Academic, New York, 1974), pp. 516–525 J. Callaway, Quantum Theory of the Solid State: Optical Property (Academic, New York, 1974), pp. 516–525
49.
go back to reference K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Appl. Phys. A 95, 485–492 (2009)CrossRef K. Sudheendran, M. Ghanashyam Krishna, K.C. James Raju, Appl. Phys. A 95, 485–492 (2009)CrossRef
50.
Metadata
Title
Structural characterization and frequency response of sol–gel derived Bi3/2MgNb3/2O7 thin films
Authors
H. L. Dong
L. X. Li
S. H. Yu
Y. X. Jin
D. Xu
Publication date
01-11-2014
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 11/2014
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2281-8

Other articles of this Issue 11/2014

Journal of Materials Science: Materials in Electronics 11/2014 Go to the issue