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Journal of Materials Science: Materials in Electronics

Published in:

01-04-2010

Structural stability of In₂O₃ films as sensor materials

Authors: V. Smatko, V. Golovanov, C. C. Liu, A. Kiv, D. Fuks, I. Donchev, M. Ivanovskaya

Published in: Journal of Materials Science: Materials in Electronics | Issue 4/2010

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Abstract

A structural stability of In₂O₃ films in gas sensors was studied in conditions of intensive exploitation of sensor device at elevated temperatures. Structural changes of In₂O₃ films as well as a surface electromigration of In atoms were observed. The degradation effects are caused by simultaneous influence on In₂O₃ films of elevated temperatures and conditions of the working device. It was found that a structural degradation of In₂O₃ films in a sensor device could be suppressed using thin substrates. Fabrication of sensors with uniform In₂O₃ films led to improvement of their operational parameters.

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Title: Structural stability of In2O3 films as sensor materials
Authors: V. Smatko
V. Golovanov
C. C. Liu
A. Kiv
D. Fuks
I. Donchev
M. Ivanovskaya
Publication date: 01-04-2010
Publisher: Springer US
Published in: Journal of Materials Science: Materials in Electronics / Issue 4/2010
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI: https://doi.org/10.1007/s10854-009-9921-4

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