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Journal of Materials Science: Materials in Electronics
Published in: Journal of Materials Science: Materials in Electronics 2/2016

04-11-2015

Structure and charge density of Ce doped gadolinium gallium garnet (GGG)

Authors: T. K. Thirumalaisamy, S. Saravanakumar, Skirmante Butkute, Aivaras Kareiva, R. Saravanan

Published in: Journal of Materials Science: Materials in Electronics | Issue 2/2016

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Abstract

Nanocrystalline powders of cerium doped gadolinium gallium garnet (Gd3Ga5O12, GGG) powders were prepared by an aqueous sol–gel method. Effects of Ce doping on the microstructure, band gap energy and electron density distributions of the grown Gd3−xCexGa5O12 (x = 0.5, 1 and 3) have been studied by means of scanning electron microscopy, diffuse reflectance spectroscopy, X-ray diffraction techniques and the maximum entropy method (MEM). The mid bond densities between different atoms of Gd3−xCexGa5O12 (x = 0.5, 1 and 3) obtained from 1D electron density profiles are analyzed.
previous article Influence of CeO2 on microstructure and microwave dielectric properties of Na1/2Sm1/2TiO3 ceramics
next article Influence of B2O3–SiO2–ZnO–BaO glass ratio and sintering temperature on the microstructure and property of copper thick film for low temperature co-fired ceramic

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Metadata
Title
Structure and charge density of Ce doped gadolinium gallium garnet (GGG)
Authors
T. K. Thirumalaisamy
S. Saravanakumar
Skirmante Butkute
Aivaras Kareiva
R. Saravanan
Publication date
04-11-2015
Publisher
Springer US
Published in
Journal of Materials Science: Materials in Electronics / Issue 2/2016
Print ISSN: 0957-4522
Electronic ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-3974-3

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