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Semiconductors
Published in: Semiconductors 9/2018

01-09-2018 | SURFACES, INTERFACES, AND THIN FILMS

Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films

Authors: A. V. Sitnikov, O. V. Zhilova, I. V. Babkina, V. A. Makagonov, Yu. E. Kalinin, O. I. Remizova

Published in: Semiconductors | Issue 9/2018

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Abstract

Thin Zr-stabilized SnO2 films are fabricated by ion-beam reactive sputtering. The amorphous thin-film SnO2 samples with various Zr concentrations are synthesized in a single production process. The influence of heat treatment on the structure and electrical properties of the synthesized films is studied. The onset of crystallization in thin-film Sn–Zr–O systems is observed at 673 and 773 K, which is accompanied by the appearance of metastable phases. Being heated to 873 K, these phases are transformed into Sn + Sn2O3. It is found that the electrotransfer the film crystallization at temperatures close to room temperature is thermally activated with an activation energy of ~0.78 eV. Tin-oxide films doped with Zr from 0.6 to 3.9 at % manifest the property of hydrogen-gas sensitivity after crystallization.
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Metadata
Title
Structure and Electrical Properties of Zirconium-Doped Tin-Oxide Films
Authors
A. V. Sitnikov
O. V. Zhilova
I. V. Babkina
V. A. Makagonov
Yu. E. Kalinin
O. I. Remizova
Publication date
01-09-2018
Publisher
Pleiades Publishing
Published in
Semiconductors / Issue 9/2018
Print ISSN: 1063-7826
Electronic ISSN: 1090-6479
DOI
https://doi.org/10.1134/S106378261809018X

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