Structure and ferroelectric properties of stoichiometric and Sr-deficient–SrBi₄Ti₄O₁₅ thin films

SrBi₄Ti₄O₁₅ (SBTi) and Bi-excess and Sr-deficient SBTi (Sr-deficient SBTi, Sr_0.8Bi_4.13Ti₄O₁₅) thin films were deposited on Pt/Ti/SiO₂/Si (100) substrates using a sol–gel method. Structure and electric properties were investigated systematically. These films were random oriented. The remnant polarization (2P _r) of SBTi film was about 25.3 μC/cm², which was larger than the reported value of SBTi thin film. The film with Sr-deficient and Bi-excess composition showed a very large remnant polarization of 36.6 μC/cm². The capacitance–voltage (C–V) characteristics of both the films showed normal ferroelectric behavior. The Curie temperatures of the same Sr-deficient and Bi-excess component ceramics sample increased slightly in comparison with that of SBTi. More importantly, the Sr-deficient and Bi-excess SBTi thin film showed high fatigue resistance against continuous switching up to 4.4 × 10¹⁰ cycles.