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Published in:
29-07-2019
Studies of photoluminescence properties and thermal stability of Cu doped ZnCdS/ZnS quantum dots by various host composition
Published in: Journal of Materials Science: Materials in Electronics | Issue 15/2019
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Abstract
Cu-doped ZnCdS/ZnS (Cu:ZnxCd1−xS/ZnS) core/shell quantum dots (QDs) are synthesized by a facile one-pot noninjection approach to investigate the composition-dependent photoluminescence (PL) properties. The resulting monodisperse Cu:ZnxCd1−xS/ZnS QDs exhibit a tuned band gap energy Eg from 2.84 to 3.13 eV and a wide dopant emission band from 630 to 569 nm when Zn content x increases from 0.2 to 0.5. Furthermore, the decreasing FWHM with increasing Zn content reveals the emission mainly arises from the recombination of electrons in conductor band with localized holes in Cu-related T2 and E level. With Zn content increasing in ZnxCd1−xS host, the relatively perfect lattice match between ZnxCd1−xS core and ZnS shell reduces the PL lifetime and increased PL quantum yield. The temperature dependent PL behavior suggests that the thermal stability of Cu:ZnxCd1−xS/ZnS QDs is enhanced because the interface nonradiative centers are efficiently suppressed by increasing Zn content.