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2018 | OriginalPaper | Chapter

1. Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics

Authors : Joff Derluyn, Marianne Germain, Elke Meissner

Published in: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Publisher: Springer International Publishing

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Abstract

One of the major factors in determining the quality of GaN technology is the epitaxial step. This chapter reviews two different approaches: the use of bulk GaN substrates and GaN-on-Si epitaxy.

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next chapter Lateral GaN HEMT Structures
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Metadata
Title
Taking the Next Step in GaN: Bulk GaN Substrates and GaN-on-Si Epitaxy for Electronics
Authors
Joff Derluyn
Marianne Germain
Elke Meissner
Copyright Year
2018
Book
Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Print ISBN: 978-3-319-77993-5

Electronic ISBN: 978-3-319-77994-2

Copyright Year: 2018

DOI
https://doi.org/10.1007/978-3-319-77994-2_1