Technique for Investigation of Non-Gaussian and Non-Stationary Properties of LF Noise in Nanoscale Semiconductor Devices

We investigated known methods of the LF (1/f) noise Gaussianity test. These are measurements of: (a) high order semi-invariants, (b) the histogram as the estimate of the probability density function, (c) the accuracy in the measurement of the noise intensity at the output of bandpass filter, (d) the correlation between intensities of the noise at outputs of non-overlapped filters, and (e) the complex bispectrum of the noise. These methods are sensitive to the non-stationarity of the noise as well. A special computeraided setup was designed for these measurements. Tests were performed for quantum well laser diodes manufactured in Nizhni Novgorod State University. We have found that the voltage noise in the diodes is non-Gaussian and seems to be non-stationary. Our results may be used for the check of radiation defects in semiconductor devices and for the investigation of the 1/f noise nature.